SP823C |
Part Number | SP823C |
Manufacturer | SamHop Microelectronics |
Description | SP823CGreen Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Max 80V 80A 5.5 @ VGS=10V FEATURE... |
Features |
Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
DFN 5x6
PIN1
87 65 12 34
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C TC=70°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
Limit 80 ±20 80 64 163 930 83 53
-55 to 150
1.5
Units V V A A A mJ W W
°C... |
Document |
SP823C Data Sheet
PDF 94.03KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SP820S |
SeCoS |
(SP810S - SP8100S) 8.0AMP Schottky Barrier Rectifiers | |
2 | SP8220BHb |
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Digital QAM & Terrestrial NIM | |
3 | SP8221BHb |
SERIT |
Digital QAM & Terrestrial NIM | |
4 | SP8255 |
SamHop Microelectronics |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
5 | SP8256 |
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