SMS123 - SeCoS

SMS123 N-Channel MOSFET

The SMS123 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Supper high density cell design Excellent ON resistance Extremely Low Threshold Volt.

Features

Voltage VDS Gate
  – Source Voltage Continuous Drain Current 1 VGS ID Pulsed Drain Current(tp=10µs) IDM Continuous Source-Drain Diode Current IS Power Dissipation Thermal Resistance from Junction to Ambient 1 Lead Temperature for Soldering Purposes (1/8’’ from case for 10s) Operating Junction & Storage Temperature Range PD RθJA TL TJ, TSTG http://www.SeCoSGmbH.com/ 10-Feb-2020 Rev. D Rating 100 ±20 0.17 0.68 0.17 0.35 357 260 150, -55~150 Unit V V A A A W °C / W °C °C Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente SMS123 0.17.