SMS123Y-C - SeCoS

SMS123Y-C N-Channel MOSFET

The SMS123Y-C is N-Channel Enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA Trench Technology Excellent on Resistance Extremely Low Threshold Voltage APPLICATION DC-DC Convert.

Features

MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current 1 TA=25°C ID TA=70°C IDM Power Dissipation PD Thermal Resistance from Junction-Ambient 2 RθJA Operating Junction & Storage Temperature Range TJ, TSTG Notes: 1. Pulse Test: Pulse width≦300µs, duty cycle≦2% 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Rating 100 ±20 0.2 0.16 0.8 350 357 150, -55~150 Unit V V A A mW °C/W °C http://www.SeCoSGmbH.com/ 16-Jun-2020 Rev. A Any changes of specification.