SMOS44N50, SMOS48N50 Power MOSFETs S D Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches M.
s IAR EAR dv/dt 100A/us; VDD VDSS' 5 150 C; RG=2 520 -55...+150 150 -55...+150 o PD TJ TJM Tstg TL VISOL TC=25oC W C 1.6mm(0.063 in.) from case for 10s 50/60Hz,RMS IISOL 1mA t=1 min t=1 s 2500 3000 1.5/13 1.5/13 30 o C V~ Md Mounting torque Terminal connection torque Nm/Ib.in. g Weight SMOS44N50, SMOS48N50 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions VGS=0V; ID=1 mA VDS=VGS; ID=8 mA VGS=±20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC VGS=10V; ID=0.5ID25 44N50 48N50 Pulse test, t 300us, duty cycle d Characterist.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMOS48N50 |
ETC |
(SMOS44N50 / SMOS48N50) POWER MOSFETS | |
2 | SMOS21N50 |
ETC |
(SMOS21N50 / SMOS26N50) Power MOSFETs | |
3 | SMOS26N50 |
ETC |
(SMOS21N50 / SMOS26N50) Power MOSFETs | |
4 | SMO33A |
SANLAND |
Optical Receivers | |
5 | SMOD701 |
Renesas |
Hydrogen Gas Smart Sensing-Module | |
6 | SMOD707 |
Renesas |
VOC Smart Sensing-Module | |
7 | SMOMAPL138B-HIREL |
Texas Instruments |
Low-Power Applications Processor | |
8 | SMOMAPL138B-HiRel |
Texas Instruments |
Low-Power Applications Processor | |
9 | SM5818 |
Crownpo |
Surface Mount Schottky Barrier Rectifiers | |
10 | SM5819 |
Crownpo |
Surface Mount Schottky Barrier Rectifiers | |
11 | SM5817 |
UPM |
1A Surface Mount Schottky Barrier Rectifiers | |
12 | SM20CXC224 |
PST |
HIGH POWER FAST RECOVERY RECTIFIER |