SMOS21N50, SMOS26N50 Power MOSFETs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209.
50 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS=0V; ID=250uA VDS=VGS; ID=4mA VGS=±20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC Characteristic Values min. typ. max. 500 2 4 ±100 200 1 Unit V V nA uA mA (TJ=25oC, unless otherwise specified) Symbol RDS(on) Test Conditions VGS=10V; ID=0.5ID25 21N50 26N50 Pulse test, t 300us, duty cycle 2% VDS=10V; ID=0.5ID25; pulse test VGS=0V; VDS=25V; f=1MHz Characteristic Values min. typ. max. 0.25 0.23 0.20 11 21 4200 450 135 135 160 28 40 62 85 16 25 33 45 65 80 30 40 0.42 0.25 Unit gts Cies Coe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMOS21N50 |
ETC |
(SMOS21N50 / SMOS26N50) Power MOSFETs | |
2 | SMOS44N50 |
ETC |
(SMOS44N50 / SMOS48N50) POWER MOSFETS | |
3 | SMOS48N50 |
ETC |
(SMOS44N50 / SMOS48N50) POWER MOSFETS | |
4 | SMO33A |
SANLAND |
Optical Receivers | |
5 | SMOD701 |
Renesas |
Hydrogen Gas Smart Sensing-Module | |
6 | SMOD707 |
Renesas |
VOC Smart Sensing-Module | |
7 | SMOMAPL138B-HIREL |
Texas Instruments |
Low-Power Applications Processor | |
8 | SMOMAPL138B-HiRel |
Texas Instruments |
Low-Power Applications Processor | |
9 | SM5818 |
Crownpo |
Surface Mount Schottky Barrier Rectifiers | |
10 | SM5819 |
Crownpo |
Surface Mount Schottky Barrier Rectifiers | |
11 | SM5817 |
UPM |
1A Surface Mount Schottky Barrier Rectifiers | |
12 | SM20CXC224 |
PST |
HIGH POWER FAST RECOVERY RECTIFIER |