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MMBFJ309L, MMBFJ310L, SMMBFJ309L, SMMBFJ310L JFET - VHF/UHF Amplifier Transistor N−Channel Features • Drain and Source are Interchangeable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXI.
• Drain and Source are Interchangeable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Drain−Source Voltage
VDS 25 Vdc
Gate−Source Voltage
VGS 25 Vdc
Gate Current
IG 10 mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C
Symbol PD
Max
225 1.8
Unit
mW mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
556 °C/W.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SMMBFJ310L |
ON Semiconductor |
JFET - VHF/UHF Amplifier Transistor |
|
| 2 | SMMBFJ177LT1G |
ON Semiconductor |
JFET Chopper |
|
| 3 | SMMBF4391LT1G |
ON Semiconductor |
JFET Switching Transistors |
|
| 4 | SMMB912D |
Vishay |
Dual N-Channel MOSFET |
|
| 5 | SMMB912DK |
Vishay |
Dual N-Channel MOSFET |
|
| 6 | SMMBD301LT3G |
ON Semiconductor |
Silicon Hot-Carrier Diodes |
|
| 7 | SMMBD330T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 8 | SMMBD7000L |
ON Semiconductor |
Dual Switching Diode |
|
| 9 | SMMBD7000LT1G |
ON Semiconductor |
Dual Switching Diode |
|
| 10 | SMMBD7000LT3G |
ON Semiconductor |
Dual Switching Diode |
|
| 11 | SMMBD701L |
ON Semiconductor |
Silicon Hot-Carrier Diodes |
|
| 12 | SMMBD770T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|