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MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consu.
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current (DC)
Total Device Dissipation @ TA = 25°C MBD301G MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G
Symbol Value Unit
VR
30
V
IF 200 (Max) mA
PF MW
280 200
Derate above.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SMMBD330T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 2 | SMMBD7000L |
ON Semiconductor |
Dual Switching Diode |
|
| 3 | SMMBD7000LT1G |
ON Semiconductor |
Dual Switching Diode |
|
| 4 | SMMBD7000LT3G |
ON Semiconductor |
Dual Switching Diode |
|
| 5 | SMMBD701L |
ON Semiconductor |
Silicon Hot-Carrier Diodes |
|
| 6 | SMMBD770T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 7 | SMMBD914LT1G |
ON Semiconductor |
High-Speed Switching Diode |
|
| 8 | SMMBD914LT3G |
ON Semiconductor |
High-Speed Switching Diode |
|
| 9 | SMMB912D |
Vishay |
Dual N-Channel MOSFET |
|
| 10 | SMMB912DK |
Vishay |
Dual N-Channel MOSFET |
|
| 11 | SMMBF4391LT1G |
ON Semiconductor |
JFET Switching Transistors |
|
| 12 | SMMBFJ177LT1G |
ON Semiconductor |
JFET Chopper |
|