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MMBFJ177LT1G, SMMBFJ177LT1G JFET Chopper P−Channel − Depletion Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG −.
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain−Gate Voltage
VDG
−25
Vdc
Gate−Source Voltage
VGS
25
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Total Device Dissipation FR− .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SMMBFJ309L |
ON Semiconductor |
JFET - VHF/UHF Amplifier Transistor |
|
| 2 | SMMBFJ310L |
ON Semiconductor |
JFET - VHF/UHF Amplifier Transistor |
|
| 3 | SMMBF4391LT1G |
ON Semiconductor |
JFET Switching Transistors |
|
| 4 | SMMB912D |
Vishay |
Dual N-Channel MOSFET |
|
| 5 | SMMB912DK |
Vishay |
Dual N-Channel MOSFET |
|
| 6 | SMMBD301LT3G |
ON Semiconductor |
Silicon Hot-Carrier Diodes |
|
| 7 | SMMBD330T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 8 | SMMBD7000L |
ON Semiconductor |
Dual Switching Diode |
|
| 9 | SMMBD7000LT1G |
ON Semiconductor |
Dual Switching Diode |
|
| 10 | SMMBD7000LT3G |
ON Semiconductor |
Dual Switching Diode |
|
| 11 | SMMBD701L |
ON Semiconductor |
Silicon Hot-Carrier Diodes |
|
| 12 | SMMBD770T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|