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MMBD914LT1G, SMMBD914LT1G, MMBD914LT3G, SMMBD914LT3G High-Speed Switching Diode Features http://onsemi.com AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* 3 CATHODE Symbol VR IF IFM(surge) V.
http://onsemi.com
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
*
3 CATHODE Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc 1 5D M G
SOT−23 CASE 318 STYLE 8
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current
1 ANODE
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction−to−Ambi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SMMBD914LT1G |
ON Semiconductor |
High-Speed Switching Diode |
|
| 2 | SMMBD301LT3G |
ON Semiconductor |
Silicon Hot-Carrier Diodes |
|
| 3 | SMMBD330T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 4 | SMMBD7000L |
ON Semiconductor |
Dual Switching Diode |
|
| 5 | SMMBD7000LT1G |
ON Semiconductor |
Dual Switching Diode |
|
| 6 | SMMBD7000LT3G |
ON Semiconductor |
Dual Switching Diode |
|
| 7 | SMMBD701L |
ON Semiconductor |
Silicon Hot-Carrier Diodes |
|
| 8 | SMMBD770T1G |
ON Semiconductor |
Schottky Barrier Diodes |
|
| 9 | SMMB912D |
Vishay |
Dual N-Channel MOSFET |
|
| 10 | SMMB912DK |
Vishay |
Dual N-Channel MOSFET |
|
| 11 | SMMBF4391LT1G |
ON Semiconductor |
JFET Switching Transistors |
|
| 12 | SMMBFJ177LT1G |
ON Semiconductor |
JFET Chopper |
|