SML25SCM650N2B - Seme LAB

SML25SCM650N2B Silicon Carbide N-Channel Power MOSFET

SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Efficiency Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID Continuous Drain Current (1) Tc = 25°C IDM Pulsed Drain Current (2) PD T.

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d by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number: 10498 Issue: 2 Page: 1 of 3 SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B ELECTRICAL CHARACTERISTICS (TA =.