SML20B56 - Seme LAB

SML20B56 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML20B56 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1..

Features

GS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
  – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
  – Source Voltage Gate
  – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 200 56 224 ±20 ±30 300 2.4
  –55 to 150 300 56 30 1300 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°.