SML20J97 SOT–227 Package Outline. Dimensions in mm (inches) 3 1 .5 (1 .2 4 0 ) 3 1 .7 (1 .2 4 8 ) 7 .8 (0 .3 0 7 ) 8 .2 (0 .3 2 2 ) 1 1 .8 (0 .4 6 3 ) 1 2 .2 (0 .4 8 0 ) W = 4 .1 (0 .1 6 1 ) 4 .3 (0 .1 6 9 ) 4 .8 (0 .1 8 7 ) H= 4 .9 (0 .1 9 3 ) (4 places) 1 2 .6 (0 .4 9 6 ) 1 2 .8 (0 .5 0 4 ) 2 5 .2 (0 .9 9 2 ) 2 5 .4 (1 .0 0 0 ) 8 .9 (0 .3 5 0 ) 9 .6 (0 .3.
either Source terminal.
D
G S
StarMOS is a new generation of high voltage N
–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain
– Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate
– Source Voltage Gate
– Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SML20J122 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
2 | SML20J175 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
3 | SML20B56 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
4 | SML20B67 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
5 | SML20H45 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
6 | SML20L100 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
7 | SML20S56 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
8 | SML20S67 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
9 | SML20T75 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
10 | SML20W65 |
Seme LAB |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
11 | SML250SRZ06ES |
Seme Lab |
Standard Rectifier Diode Module | |
12 | SML25SCM650N2B |
TT |
SILICON CARBIDE N-CHANNEL POWER MOSFET |