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Semiconductor SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=650V(Min.) • Low Crss : Crss=14.6pF(Typ.) • Low gate charge : Qg=41nC(Typ.) • Low RDS(on) :RDS(on)=0.8Ω(Max.) Ordering Information Type NO. SMK1265F Marking SMK1265 PIN Connections SMK1265F Advanced Power MOSFET Package Code TO-220F-3L D G S 1. Gate 2. Drain 3. Source KSD-T.
• High Voltage: BVDSS=650V(Min.)
• Low Crss : Crss=14.6pF(Typ.)
• Low gate charge : Qg=41nC(Typ.)
• Low RDS(on) :RDS(on)=0.8Ω(Max.)
Ordering Information
Type NO.
SMK1265F
Marking SMK1265
PIN Connections
SMK1265F
Advanced Power MOSFET
Package Code TO-220F-3L
D
G
S
1. Gate 2. Drain 3. Source
KSD-T0O039-000
1
SMK1265F
Absolute maximum ratings
Characteristic
Drain-source voltage Gate-source voltage
Drain current (DC)
*
Drain current (Pulsed)
*
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy
② ②.
SMK1265F - Kodenshi
SMK1265F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage : BVDSS=650V(Min.) Low .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SMK1265FD |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|
| 2 | SMK1260F |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|
| 3 | SMK1260WF |
AUK |
Advanced N-Ch Power MOSFET |
|
| 4 | SMK12 |
EIC |
(SMK12 - SMK1B) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 5 | SMK1060D2 |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|
| 6 | SMK1060F |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|
| 7 | SMK1060FG |
KODENSHI |
Advanced N-Ch Power MOSFET |
|
| 8 | SMK1060FJ |
KODENSHI |
Advanced N-Ch Power MOSFET |
|
| 9 | SMK1060P |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|
| 10 | SMK1060PS |
AUK |
Advanced N-Ch Power MOSFET |
|
| 11 | SMK1080CI |
AUK |
Advanced N-Ch Power MOSFET |
|
| 12 | SMK1080FD |
KODENSHI |
Advanced N-Ch Power MOSFET |
|