Semiconductor SMK1060P Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(Min.) • Low Crss : Crss=18pF(Typ.) • Low gate charge : Qg=35nc(Typ.) • Low RDS(on) :RDS(on)=0.75Ω(Max.) PIN Connection D G Ordering Information Type No. SMK1060P Marking SMK1060 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maxim.
• High Voltage: BVDSS=600V(Min.)
• Low Crss : Crss=18pF(Typ.)
• Low gate charge : Qg=35nc(Typ.)
• Low RDS(on) :RDS(on)=0.75Ω(Max.)
PIN Connection
D
G
Ordering Information
Type No. SMK1060P Marking SMK1060 Package Code TO-220AB-3L GDS TO-220AB-3L S
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC)
* Drain current (Pulsed)
* Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
* .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMK1060D2 |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET | |
2 | SMK1060F |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET | |
3 | SMK1060FG |
KODENSHI |
Advanced N-Ch Power MOSFET | |
4 | SMK1060FJ |
KODENSHI |
Advanced N-Ch Power MOSFET | |
5 | SMK1060PS |
AUK |
Advanced N-Ch Power MOSFET | |
6 | SMK1080CI |
AUK |
Advanced N-Ch Power MOSFET | |
7 | SMK1080FD |
KODENSHI |
Advanced N-Ch Power MOSFET | |
8 | SMK1080FD |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET | |
9 | SMK12 |
EIC |
(SMK12 - SMK1B) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
10 | SMK1260F |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET | |
11 | SMK1260WF |
AUK |
Advanced N-Ch Power MOSFET | |
12 | SMK1265F |
Kodenshi |
Advanced N-Ch Power MOSFET |