SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=800V Low gate charge: Qg=58nC (Typ.) Low drain-source On resistance: RDS(on)=1.1Ω (Max.) RoHS compliant device 100% avalanche tested Ordering Information Part Number Marking Package SMK1080FD SMK1080 TO-220F-3L GDS TO-220F-3.
Drain-Source breakdown voltage: BVDSS=800V
Low gate charge: Qg=58nC (Typ.)
Low drain-source On resistance: RDS(on)=1.1Ω (Max.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SMK1080FD
SMK1080
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AAUUKK SM△ΔKY1YM0MD8DD0D SDB20D45
Column 1: Manufacturer Column 2: Production Information
e.g.) △YMDD
-. △: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source volta.
SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMK1080CI |
AUK |
Advanced N-Ch Power MOSFET | |
2 | SMK1060D2 |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET | |
3 | SMK1060F |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET | |
4 | SMK1060FG |
KODENSHI |
Advanced N-Ch Power MOSFET | |
5 | SMK1060FJ |
KODENSHI |
Advanced N-Ch Power MOSFET | |
6 | SMK1060P |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET | |
7 | SMK1060PS |
AUK |
Advanced N-Ch Power MOSFET | |
8 | SMK12 |
EIC |
(SMK12 - SMK1B) SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
9 | SMK1260F |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET | |
10 | SMK1260WF |
AUK |
Advanced N-Ch Power MOSFET | |
11 | SMK1265F |
Kodenshi |
Advanced N-Ch Power MOSFET | |
12 | SMK1265F |
AUK |
Advanced Power MOSFET |