SMK0990CI - KODENSHI KOREA

SMK0990CI Advanced N-Ch Power MOSFET

SMK0990CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=900V (Min.)  Low gate charge: Qg=52nC (Typ.)  Low drain-source On resistance: RDS(on)=1.4Ω (Max.)  100% avalanche tested  RoHS compliant device Ordering Information Part Number SMK0990CI Marking SMK0990 Package TO-3P GDS TO-3P Marking.

Features

 Drain-Source breakdown voltage: BVDSS=900V (Min.)
 Low gate charge: Qg=52nC (Typ.)
 Low drain-source On resistance: RDS(on)=1.4Ω (Max.)
 100% avalanche tested
 RoHS compliant device Ordering Information Part Number SMK0990CI Marking SMK0990 Package TO-3P GDS TO-3P Marking Information Column 1: Manufacturer Column 2: Production Information e.g.) GFYMDD -. G: Option Code (H: Halogen Free) -. F: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code AUK GFYMDD SMK0990 Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain cu.