SMK0160IS - KODENSHI KOREA

SMK0160IS Advanced N-Ch Power MOSFET

SMK0160IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=600V (Min.) • Low gate charge: Qg=3.9nC (Typ.) • Low drain-source On resistance: RDS(on)=11.5Ω (Max.) • 100% avalanche tested • RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package I-PAK (Short Lead) .

Features

• Drain-Source breakdown voltage: BVDSS=600V (Min.)
• Low gate charge: Qg=3.9nC (Typ.)
• Low drain-source On resistance: RDS(on)=11.5Ω (Max.)
• 100% avalanche tested
• RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0160 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC)
* Drain current (Pulsed)
* .