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SMK0990CI |
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| Part Number | SMK0990CI |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor SMK0990CI ·FEATURES ·New revolutionary high voltage technology ·With TO-3PN package ·Drain-Source breakdown voltage:BVDSS=900V(Min.) ·Low drain... |
| Features |
·New revolutionary high voltage technology ·With TO-3PN package ·Drain-Source breakdown voltage:BVDSS=900V(Min.) ·Low drain-source On resistance: RDS(on)=1.4Ω (Max.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 900 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 9 5.7 36 PD Total Dissipation 130 Tj Operating Junction Temperature -55~150 Tstg... |
| Document |
 SMK0990CI Data Sheet
PDF 231.43KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SMK0990CI |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
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| 2 | SMK0990FD |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|
| 3 | SMK0965F |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|
| 4 | SMK0965FC |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|
| 5 | SMK0965FJ |
KODENSHI KOREA |
Advanced N-Ch Power MOSFET |
|