& FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-59 A L 3 PACKAGE INFORMATION Weight: 0.07800g K 1 3 Top View 2 C B 1 2 E D Drain MARKING CODE 1 Gate 3 F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3.0.
The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-59 A L 3 PACKAGE INFORMATION Weight: 0.07800g K 1 3 Top View 2 C B 1 2 E D Drain MARKING CODE 1 Gate 3 F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 3402 1 2 Source ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Curr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG3400 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SMG3401 |
SeCoS |
P-Channel MOSFET | |
3 | SMG3403 |
SeCoS |
P-Channel MOSFET | |
4 | SMG3403A |
SeCoS |
P-Channel MOSFET | |
5 | SMG3404 |
SeCoS |
N-Channel MOSFET | |
6 | SMG3407 |
SeCoS |
P-Channel Enhancement Mode MOSFET | |
7 | SMG30 |
MACOM |
Voltage-Controlled Attenuator Module | |
8 | SMG3018K |
SeCoS |
N-Channel MOSFET | |
9 | SMG3021-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
10 | SMG3314 |
SeCoS |
P-Channel MOSFET | |
11 | SMG351AN |
SeCoS |
N-Channel MOSFET | |
12 | SMG3D60C |
SanRex Corporation |
THYRISTOR |