The SMG3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The SMG3401 is universally used for all commercial-industrial applications. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G.
* Small Package Outline
* Lower Gate Charge
* RoHS Compliant
H
Gate Source
D
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg
3 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
-30
±12 -4.2 -3.5 30 1.38 0.01 -55~+150
Unit
V V A A A W
W/ C
o o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Ratings
90
Unit
o
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG3400 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
2 | SMG3402 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
3 | SMG3403 |
SeCoS |
P-Channel MOSFET | |
4 | SMG3403A |
SeCoS |
P-Channel MOSFET | |
5 | SMG3404 |
SeCoS |
N-Channel MOSFET | |
6 | SMG3407 |
SeCoS |
P-Channel Enhancement Mode MOSFET | |
7 | SMG30 |
MACOM |
Voltage-Controlled Attenuator Module | |
8 | SMG3018K |
SeCoS |
N-Channel MOSFET | |
9 | SMG3021-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
10 | SMG3314 |
SeCoS |
P-Channel MOSFET | |
11 | SMG351AN |
SeCoS |
N-Channel MOSFET | |
12 | SMG3D60C |
SanRex Corporation |
THYRISTOR |