The G30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is .
FAST SWITCHING: < 0.2 µsec, 10 TO 90% (TYP.) < 1 µsec, 0 TO 100% (TYP.)
HIGH DYNAMIC RANGE: 40 dB TO 1000 MHz (TYP.)
LOW VSWR: 1.4:1 (TYP.) Description
The G30 attenuator is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. This design uses three pin diodes to provide a non linear attenuation response across a broadband frequency range. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.
Ordering Information
Product Image
Part Number
Package
G30
TO-8
S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SMG3018K |
SeCoS |
N-Channel MOSFET | |
2 | SMG3021-C |
SeCoS |
P-Channel Enhancement Mode Power MOSFET | |
3 | SMG3314 |
SeCoS |
P-Channel MOSFET | |
4 | SMG3400 |
SeCoS |
N-Ch Enhancement Mode Power MOSFET | |
5 | SMG3401 |
SeCoS |
P-Channel MOSFET | |
6 | SMG3402 |
SeCoS Halbleitertechnologie |
N-Channel MOSFET | |
7 | SMG3403 |
SeCoS |
P-Channel MOSFET | |
8 | SMG3403A |
SeCoS |
P-Channel MOSFET | |
9 | SMG3404 |
SeCoS |
N-Channel MOSFET | |
10 | SMG3407 |
SeCoS |
P-Channel Enhancement Mode MOSFET | |
11 | SMG351AN |
SeCoS |
N-Channel MOSFET | |
12 | SMG3D60C |
SanRex Corporation |
THYRISTOR |