SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G48,USM12G48,SM12J48,USM12J48 SM12G48A,USM12G48A,SM12J48A,USM12J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off-State Voltage : VDRM=400, 600V l R.M.S. On-State Current : IT (RMS) =12A l Gate Trigger Current : IGT=30mA Max. : IGT=2.
rrent Peak One Cycle Surge On-State Current (Non-Repetitive) I2t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range SYMBOL VDRM IT (RMS) ITSM I2t di /dt PGM PG (AV) VGM IGM Tj Tstg RATING 400 600 12 120 (50Hz) 132 (60Hz) 72 50 5 0.5 10 2 −40~125 −40~125 UNIT V A A A2s A / ms W W V A °C °C Note 1 : VDRM=0.5×Rated ITM≤15A tgw≥10ms tgr≤250ns igp=IGT×2.0 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Repetit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SM12G48 |
Toshiba |
BI-DIRECTIONAL TRIODE THYRISTOR | |
2 | SM12G45 |
Toshiba Semiconductor |
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE | |
3 | SM12G45A |
Toshiba Semiconductor |
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE | |
4 | SM12GZ47 |
Toshiba Semiconductor |
(SM12xxZ47x) AC POWER CONTROL APPLICATIONS | |
5 | SM12GZ47A |
Toshiba Semiconductor |
(SM12xxZ47x) AC POWER CONTROL APPLICATIONS | |
6 | SM12 |
Union Semiconductor |
Low Capacitance Dual Line ESD Protection Diode Array | |
7 | SM12 |
Diodes |
DUAL COMMON ANODE TVS DIODE | |
8 | SM12 |
Littelfuse |
TVS Diode Arrays | |
9 | SM12 |
Microsemi |
Bidirectional/Unidirectional TVSarray | |
10 | SM12 |
GME |
TVS DIODE ARRAY | |
11 | SM12 |
MCC |
TVS | |
12 | SM12 |
Semtech |
TVS Diode Array |