SM12G45,SM12J45,SM12G45A,SM12J45A TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G45,SM12J45,SM12G45A,SM12J45A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V l R.M.S On−State Current l High Commutating (dv / dt) : IT (RMS) = 12A MAXIMUM RATINGS CHARACTERISTIC SM12G45 SM12G45A SM12J45 SM12J45A .
M12J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I SM12G45 SM12J45 Gate Trigger Voltage SM12G45A SM12J45A II III IV I II III IV I SM12G45 SM12J45 Gate Trigger Current SM12G45A SM12J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Critical Rate of Rise of Off−State Voltage at Commutation SM12G45 SM12J45 SM12G45A SM12J45A VTM VGD IH Rth (j−c) ITM = 17A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case, AC VDRM = 400V (di / dt) c = − 6.5A / ms IGT VD = 12V, RL = 20Ω VGT VD = 12V, RL .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SM12G45 |
Toshiba Semiconductor |
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE | |
2 | SM12G48 |
Toshiba |
BI-DIRECTIONAL TRIODE THYRISTOR | |
3 | SM12G48A |
Toshiba |
BI-DIRECTIONAL TRIODE THYRISTOR | |
4 | SM12GZ47 |
Toshiba Semiconductor |
(SM12xxZ47x) AC POWER CONTROL APPLICATIONS | |
5 | SM12GZ47A |
Toshiba Semiconductor |
(SM12xxZ47x) AC POWER CONTROL APPLICATIONS | |
6 | SM12 |
Union Semiconductor |
Low Capacitance Dual Line ESD Protection Diode Array | |
7 | SM12 |
Diodes |
DUAL COMMON ANODE TVS DIODE | |
8 | SM12 |
Littelfuse |
TVS Diode Arrays | |
9 | SM12 |
Microsemi |
Bidirectional/Unidirectional TVSarray | |
10 | SM12 |
GME |
TVS DIODE ARRAY | |
11 | SM12 |
MCC |
TVS | |
12 | SM12 |
Semtech |
TVS Diode Array |