SM12G48 - Toshiba

SM12G48 BI-DIRECTIONAL TRIODE THYRISTOR

SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM12G48,USM12G48,SM12J48,USM12J48 SM12G48A,USM12G48A,SM12J48A,USM12J48A AC POWER CONTROL APPLICATIONS l Repetitive Peak Off-State Voltage : VDRM=400, 600V l R.M.S. On-State Current : IT (RMS) =12A l Gate Trigger Current : IGT=30mA Max. : IGT=2.

Features

rrent Peak One Cycle Surge On-State Current (Non-Repetitive) I2t Limit Value Critical Rate of Rise of On-State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range SYMBOL VDRM IT (RMS) ITSM I2t di /dt PGM PG (AV) VGM IGM Tj Tstg RATING 400 600 12 120 (50Hz) 132 (60Hz) 72 50 5 0.5 10 2 −40~125 −40~125 UNIT V A A A2s A / ms W W V A °C °C Note 1 : VDRM=0.5×Rated ITM≤15A tgw≥10ms tgr≤250ns igp=IGT×2.0 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Repetit.