This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 4.5A, 650V, RDS(on) = 2.5Ω@VGS = 10 V - Low gate charge ( typical 13.3nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D TO-220F TO-220 G GD S GDS S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP5N65S SLF5N65S VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) G.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLF5N65C |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLF5N60C |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLF5N50S |
Maple Semiconductor |
N-Channel MOSFET | |
4 | SLF5000 |
Semtech Corporation |
(SLFxx000) Fast Recovery High Voltage Rectifier Assembly | |
5 | SLF50R140SJ |
Maple Semiconductor |
N-Channel MOSFET | |
6 | SLF50R240SJ |
Maple Semiconductor |
N-Channel MOSFET | |
7 | SLF50R290SJ |
Maple Semiconductor |
N-Channel MOSFET | |
8 | SLF001 |
AMI |
CMOS Gate Array | |
9 | SLF002 |
AMI |
CMOS Gate Array | |
10 | SLF004 |
AMI |
CMOS Gate Array | |
11 | SLF006 |
AMI |
CMOS Gate Array | |
12 | SLF011 |
AMI |
CMOS Gate Array |