This Power MOSFET is producFeeadtuurseisng Maplesemi‘s Advanced Super-Junction This advanced technology theacsh--nb7Lo.oe6wlAeo,gng5a0ytee0. Vsch,paRerDgcSe(oi(na)ttlyylppy. i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig-- F1h0a0set%nswaevitracghlaiynngcpheutless.
-18A, 500V, RDS(on) typ.= 0.21Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 43nC) D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage Drain Current ID - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (No.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLF50R290SJ |
Maple Semiconductor |
N-Channel MOSFET | |
2 | SLF50R140SJ |
Maple Semiconductor |
N-Channel MOSFET | |
3 | SLF5000 |
Semtech Corporation |
(SLFxx000) Fast Recovery High Voltage Rectifier Assembly | |
4 | SLF5N50S |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLF5N60C |
Maple Semiconductor |
N-Channel MOSFET | |
6 | SLF5N65C |
Maple Semiconductor |
N-Channel MOSFET | |
7 | SLF5N65S |
Maple Semiconductor |
N-Channel MOSFET | |
8 | SLF001 |
AMI |
CMOS Gate Array | |
9 | SLF002 |
AMI |
CMOS Gate Array | |
10 | SLF004 |
AMI |
CMOS Gate Array | |
11 | SLF006 |
AMI |
CMOS Gate Array | |
12 | SLF011 |
AMI |
CMOS Gate Array |