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This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 4.5A, 650V, RDS(on)typ. = 2.5Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SLF5N65S |
Maple Semiconductor |
N-Channel MOSFET |
|
| 2 | SLF5N60C |
Maple Semiconductor |
N-Channel MOSFET |
|
| 3 | SLF5N50S |
Maple Semiconductor |
N-Channel MOSFET |
|
| 4 | SLF5000 |
Semtech Corporation |
(SLFxx000) Fast Recovery High Voltage Rectifier Assembly |
|
| 5 | SLF50R140SJ |
Maple Semiconductor |
N-Channel MOSFET |
|
| 6 | SLF50R240SJ |
Maple Semiconductor |
N-Channel MOSFET |
|
| 7 | SLF50R290SJ |
Maple Semiconductor |
N-Channel MOSFET |
|
| 8 | SLF001 |
AMI |
CMOS Gate Array |
|
| 9 | SLF002 |
AMI |
CMOS Gate Array |
|
| 10 | SLF004 |
AMI |
CMOS Gate Array |
|
| 11 | SLF006 |
AMI |
CMOS Gate Array |
|
| 12 | SLF011 |
AMI |
CMOS Gate Array |
|