This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operat.
- 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLD65R2K6SJ / SLU65R2K6SJ VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source Vol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLD65018250S |
Roithner |
Samsung Laser Diode | |
2 | SLD6501xxx |
Samsung |
Laser Diode | |
3 | SLD60-018 |
Littelfuse |
TVS Diodes | |
4 | SLD60A |
MCC |
6000Watt Transient Voltage Suppressors | |
5 | SLD60CA |
MCC |
6000Watt Transient Voltage Suppressors | |
6 | SLD60R2K3SJ |
Maple Semiconductor |
N-Channel MOSFET | |
7 | SLD60U-017 |
Littelfuse |
TVS Diodes | |
8 | SLD6162RLI |
Sony Corporation |
Two-wavelength Laser Diode | |
9 | SLD6163RL |
Sony Corporation |
Dual wavelength Laser Diode | |
10 | SLD63518xxx |
Samsung |
Laser Diode | |
11 | SLD6N70U |
Maple Semiconductor |
N-Channel MOSFET | |
12 | SLD6S14A |
Littelfuse |
TVS Diodes |