SLD65R2K6SJ |
Part Number | SLD65R2K6SJ |
Manufacturer | Maple Semiconductor |
Description | This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching perfo... |
Features |
- 2.3A, 650V, RDS(on) typ. = 2.3Ω@VGS = 10 V - Low gate charge ( typical 7nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
GS
D-PAK
GDS
I-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
SLD65R2K6SJ / SLU65R2K6SJ
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current - Continuous (TC = 25℃)
- Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source Vol... |
Document |
SLD65R2K6SJ Data Sheet
PDF 627.85KB |
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1 | SLD65018250S |
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2 | SLD6501xxx |
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3 | SLD60-018 |
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4 | SLD60A |
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5 | SLD60CA |
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