This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power sup.
- 4.8A, 700V, RDS(on) typ = 1.8Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Si.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SLD60-018 |
Littelfuse |
TVS Diodes | |
2 | SLD60A |
MCC |
6000Watt Transient Voltage Suppressors | |
3 | SLD60CA |
MCC |
6000Watt Transient Voltage Suppressors | |
4 | SLD60R2K3SJ |
Maple Semiconductor |
N-Channel MOSFET | |
5 | SLD60U-017 |
Littelfuse |
TVS Diodes | |
6 | SLD6162RLI |
Sony Corporation |
Two-wavelength Laser Diode | |
7 | SLD6163RL |
Sony Corporation |
Dual wavelength Laser Diode | |
8 | SLD63518xxx |
Samsung |
Laser Diode | |
9 | SLD65018250S |
Roithner |
Samsung Laser Diode | |
10 | SLD6501xxx |
Samsung |
Laser Diode | |
11 | SLD65R2K6SJ |
Maple Semiconductor |
N-Channel MOSFET | |
12 | SLD6S14A |
Littelfuse |
TVS Diodes |