SKP10N60 SKB10N60, SKW10N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distributio.
= 25°C Operating junction and storage temperature
Symbol VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj , Tstg
Ordering Code Q67040-S4217 Q67040-S4218 Q67040-S4241
Value 600
21 10.9 42 42
Unit V A
21 10 42 ±20 10
104
-55...+150
V µs
W
°C
1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1
Mar-00
SKP10N60 SKB10N60, SKW10N60
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction
– case Diode thermal resistance, junction
– case Thermal resistance, junction
– ambient SMD version, device on PCB1)
Symbol RthJC RthJCD RthJA RthJA
Conditions
TO.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKP10N60A |
Infineon Technologies AG |
Fast IGBT | |
2 | SKP15N60 |
Infineon Technologies |
Fast IGBT | |
3 | SKP15N60 |
Infineon Technologies |
Fast IGBT in NPT-technology | |
4 | SKP-308H |
Samsung |
Keyphone & Standard Phone User Guide | |
5 | SKP-816H |
Samsung |
Keyphone & Standard Phone User Guide | |
6 | SKP-MS401 |
HERO ELECTRONICS |
Small PIR Module | |
7 | SKP02N120 |
Infineon Technologies AG |
IGBT | |
8 | SKP02N60 |
Infineon Technologies |
Fast IGBT | |
9 | SKP04N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode | |
10 | SKP06N60 |
Infineon Technologies |
Fast IGBT | |
11 | SKP202 |
SANKEN |
N-Channel MOS FET | |
12 | SKP253 |
SANKEN |
MOSFET |