SKP02N120 - Infineon Technologies AG

SKP02N120 IGBT

SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel swit.

Features

r 10s Tj , Tstg -55...+150 260 °C 1) VCE 1200V IC 2A Eoff 0.11mJ Tj 150°C Package TO-220AB TO-263AB(D2PAK) Ordering Code Q67040-S4278 Q67040-S4279 Symbol VCE IC Value 1200 6.2 2.8 Unit V A ICpul s IF 9.6 9.6 4.5 2 IFpul s VGE tSC Ptot 9 ±20 10 62 V µs W VGE = 15V, 100V≤VCC≤1200V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02 Power Semiconductors SKP02N120 SKB02N120 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
  – case Diode thermal resistance, junction
  – case Thermal resistance, junction
  – ambie.