SKP02N60 SKB02N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: www.DataSheet4U.com- very tight parameter distri.
r dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C
1)
VCE 600V
IC 2A
VCE(sat) 2.2V
Tj 150°C
Package TO-220AB TO-263AB
Ordering Code Q67040-S4214 Q67040-S4215
Symbol VCE IC
Value 600 6.0 2.9
Unit V A
ICpul s IF
12 12
6.0 2.9 IFpul s VGE tSC Ptot 12 ±20 10 30 V µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
SKP02N60 SKB02N60
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction
– case Diode thermal resistance, junction
– case Thermal www.D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKP02N120 |
Infineon Technologies AG |
IGBT | |
2 | SKP04N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode | |
3 | SKP06N60 |
Infineon Technologies |
Fast IGBT | |
4 | SKP-308H |
Samsung |
Keyphone & Standard Phone User Guide | |
5 | SKP-816H |
Samsung |
Keyphone & Standard Phone User Guide | |
6 | SKP-MS401 |
HERO ELECTRONICS |
Small PIR Module | |
7 | SKP10N60 |
Infineon |
Fast S-IGBT | |
8 | SKP10N60A |
Infineon Technologies AG |
Fast IGBT | |
9 | SKP15N60 |
Infineon Technologies |
Fast IGBT | |
10 | SKP15N60 |
Infineon Technologies |
Fast IGBT in NPT-technology | |
11 | SKP202 |
SANKEN |
N-Channel MOS FET | |
12 | SKP253 |
SANKEN |
MOSFET |