SKM75GB12V - Semikron International

SKM75GB12V V-IGBT

SKM75GB12V SEMITRANS® 2 SKM75GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical A.

Features

• V-IGBT = 6. Generation Trench V-IGBT (Fuji)
• CAL4 = Soft switching 4. Generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Copper Bonding)
• UL recognized, file no. E63532
• Increased power cycling capability
• With integrated gate resistor
• Low switching losses at high di/dt Typical Applications
*
• AC inverter drives
• UPS
• Electronic welders Remarks
• Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc .