SKM75GB17E4H16 - Semikron

SKM75GB17E4H16 IGBT

SKM75GB17E4H16 SEMITRANS® 2 IGBT4 Modules SKM75GB17E4H16 Features • H16: IGBT-chip with improved robustness against moisture • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequ.

Features

• H16: IGBT-chip with improved robustness against moisture
• IGBT4 = 4. generation medium fast trench IGBT (Infineon)
• CAL4 = Soft switching 4. Generation CAL-Diode
• Insulated copper baseplate using DBC Technology (Direct Copper Bonding)
• With integrated Gate resistor
• For switching frequencies up to 8kHz
• UL recognized, file no. E63532 Typical Applications
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• Medium voltage inverter market Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC .