SKM75GB12V |
Part Number | SKM75GB12V |
Manufacturer | Semikron International |
Description | SKM75GB12V SEMITRANS® 2 SKM75GB12V Features • V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copp... |
Features |
• V-IGBT = 6. Generation Trench V-IGBT (Fuji) • CAL4 = Soft switching 4. Generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Copper Bonding) • UL recognized, file no. E63532 • Increased power cycling capability • With integrated gate resistor • Low switching losses at high di/dt Typical Applications* • AC inverter drives • UPS • Electronic welders Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc ... |
Document |
SKM75GB12V Data Sheet
PDF 245.56KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKM75GB123D |
Semikron |
IGBT | |
2 | SKM75GB124D |
Semikron International |
Low-Loss IGBT | |
3 | SKM75GB128D |
Semikron International |
SPT IGBT Module | |
4 | SKM75GB12F4 |
Semikron |
IGBT | |
5 | SKM75GB12T4 |
Semikron International |
IGBT |