SKM200GB12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 313 241 200 600 -20 ... 20 Tj = 150 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 229 172 200 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 600 990 -40 ... 175 Tterminal = 80 °C AC sinus 50 Hz,.
• IGBT4 = 4. generation fast trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to 20kHz
• UL recognized, file no. E63532
VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol
Inverse diode Tj = 175 °C
Characteristics Symbol
IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c)
Conditions
IC = 200 A VGE = 15 V chiplevel chiplevel VGE = 15 V ch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKM200GB123D |
Semikron |
IGBT | |
2 | SKM200GB123D1 |
Semikron |
IGBT | |
3 | SKM200GB124 |
ETC |
IGBT | |
4 | SKM200GB124D |
ETC |
IGBT | |
5 | SKM200GB125D |
Semikron International |
IGBT | |
6 | SKM200GB126D |
Semikron International |
IGBT | |
7 | SKM200GB128D |
Semikron |
SPT IGBT | |
8 | SKM200GB12E4 |
Semikron International |
IGBT | |
9 | SKM200GB12F4 |
Semikron |
IGBT | |
10 | SKM200GB12V |
Semikron International |
IGBT | |
11 | SKM200GB173D |
Semikron |
IGBT | |
12 | SKM200GB173D1 |
Semikron |
IGBT |