SKM200GB12E4 - Semikron International

SKM200GB12E4 IGBT

SKM200GB12E4 SEMITRANS® 3 IGBT4 Modules SKM200GB12E4 Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 12kHz • .

Features

• IGBT4 = 4. generation medium fast trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation CAL-diode
• Isolated copper baseplate using DBC technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to 12kHz
• UL recognized, file no. E63532 Typical Applications
*
• AC inverter drives
• UPS Remarks
• Case temperature limited to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid for Tj = 150°C Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C.