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SKM200GB12T4 |
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| Part Number | SKM200GB12T4 |
| Manufacturer | Semikron |
| Description | SKM200GB12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 313 241 200 600 -20 ... 20 Tj... |
| Features |
• IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 VGES tpsc Tj IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Inverse diode Tj = 175 °C Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Conditions IC = 200 A VGE = 15 V chiplevel chiplevel VGE = 15 V ch... |
| Document |
 SKM200GB12T4 Data Sheet
PDF 393.85KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SKM200GB123D |
Semikron |
IGBT |
|
| 2 | SKM200GB123D1 |
Semikron |
IGBT |
|
| 3 | SKM200GB124 |
ETC |
IGBT |
|
| 4 | SKM200GB124D |
ETC |
IGBT |
|
| 5 | SKM200GB125D |
Semikron International |
IGBT |
|