SKB02N120 - Infineon Technologies AG

SKB02N120 IGBT

SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s.  lower Eoff compared to previous generation  Short circuit withstand time – 10 s  Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners  NPT-Te.

Features

TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, 100VVCC1200V, Tj  150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, reflow soldering, MSL1 Symbol VCE IC ICpuls - IF IFpuls VGE tSC Ptot Tj , Tstg Ts Value 1200 6.2 2.8 9.6 9.6 Unit V A 4.5 2 9 20 10 62 -55...+150 260 V s W C 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.4 12.06.2013 SKB02N120 Thermal Resistance Parameter Characteristic IGBT t.