SKB06N60 - Infineon Technologies

SKB06N60 Fast IGBT in NPT-technology

www.DataSheet4U.com SKP06N60, SKB06N60 SKA06N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation C combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls G E - Inverter • NPT-Technology for 600V applications offers: - very ti.

Features

t TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25°C Mounting Torque, M3 Screw 2) 1) VCE IC 600 12 6.9 600 9 5.0 24 24 V A ICpul s IF 24 24 12 6 IFpul s VGE tSC Ptot M Tj , Tstg 24 ±20 10 68 12 6 24 ±20 10 32 1.0 V µs W Nm VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Operating junction and storage temperature -55...+150 -55...+150 °C 1) 2) Allowed number of short c.