SKB02N120 |
Part Number | SKB02N120 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000; time between short circuits: >1s. lower Eoff compared... |
Features |
TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2 VGE = 15V, 100VVCC1200V, Tj 150C Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature, reflow soldering, MSL1
Symbol VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj , Tstg Ts
Value 1200
6.2 2.8 9.6 9.6
Unit V A
4.5 2 9 20 10
62
-55...+150 260
V s
W
C
1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.4 12.06.2013
SKB02N120
Thermal Resistance
Parameter
Characteristic IGBT t... |
Document |
SKB02N120 Data Sheet
PDF 608.06KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SKB02N60 |
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Fast IGBT | |
2 | SKB04N60 |
Infineon Technologies AG |
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode | |
3 | SKB06N60 |
Infineon Technologies |
Fast IGBT in NPT-technology | |
4 | SKB1.2xx |
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5 | SKB1.5xx |
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