SJT688APPN - Silan Microelectronics

SJT688APPN PNP SILICON TRANSISTOR

SJT688APPN is PNP silicon transistor fabricated with Silan planar transistor technology, The advanced technology of multilayer epitaxy, ultra-low density of crystal defects, polyimide passivation, and thin chip of less than 200 microns makes low thermal resistance, large power dissipation and good reliability of SJT688APPN. Optimized die structure design an.

Features

 High breakdown voltage margin  Very low leakage current  High output power: 80W  High secondary breakdown tolerance and reliability NOMENCLATURE ORDERING INFORMATION Part No. SJT688APPN Package TO-3P Marking 688A Material Pb free Packing Tube ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted) Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector Current Base Current Operating Junction Temperature Range Symbol BVCEO BVEBO BVCBO IC IB TJ -120 -5 -120 Rating -10 -1 -55~+150 IC=5mA, IB=0 IE=1mA, IC=0 IC.