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SJT688APPN |
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| Part Number | SJT688APPN |
| Manufacturer | Silan Microelectronics |
| Description | SJT688APPN is PNP silicon transistor fabricated with Silan planar transistor technology, The advanced technology of multilayer epitaxy, ultra-low density of crystal defects, polyimide passivation, an... |
| Features |
High breakdown voltage margin Very low leakage current High output power: 80W High secondary breakdown tolerance and reliability
NOMENCLATURE
ORDERING INFORMATION
Part No. SJT688APPN
Package TO-3P
Marking 688A
Material Pb free
Packing Tube
ABSOLUTE MAXIMUM RATINGS (Ta=25C unless otherwise noted)
Characteristics Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector Current Base Current Operating Junction Temperature Range
Symbol BVCEO BVEBO BVCBO
IC IB TJ
-120 -5
-120
Rating
-10 -1 -55~+150
IC=5mA, IB=0 IE=1mA, IC=0 IC... |
| Document |
 SJT688APPN Data Sheet
PDF 321.90KB |
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