SJTA08N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.52Ω ID 8A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTA08N65C TO-220F BRAND IPS Absolute Max.
● RoHS Compliant
● Low ON Resistance
● Low Gate Charge
● Peak Current vs Pulse Width Curve
● Inductive Switching Curves
Ordering Information
PART NUMBER PACKAGE SJTA08N65C TO-220F
BRAND
IPS
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
SJTA08N65C
VDSS ID IDM
Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V
(NOTE
*2)
650 8 24
Power Dissipation PD Derating Factor above 25℃
27.8 0.22
VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(L=10mH)
±30 140
EAR Avalanche Energy ,Repetitive (NOTE
*2)
0.2
IAR Avalanche.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SJTA04N65C |
IPS |
Super-Junction MOSFET | |
2 | SJTA05N60C |
IPS |
Super-Junction MOSFET | |
3 | SJTA07N60C |
IPS |
Super-Junction MOSFET | |
4 | SJTA11N65C |
IPS |
Super-Junction MOSFET | |
5 | SJTA11N70C |
IPS |
Super-Junction MOSFET | |
6 | SJTA12N60C |
IPS |
Super-Junction MOSFET | |
7 | SJTA20N60A |
IPS |
Super-Junction MOSFET | |
8 | SJTA20N60C |
IPS |
Super-Junction MOSFET | |
9 | SJTA20N65C |
IPS |
Super-Junction MOSFET | |
10 | SJTA20N70C |
IPS |
Super-Junction MOSFET | |
11 | SJT4793NF |
Silan Microelectronics |
NPN SILICON TRANSISTOR | |
12 | SJT688APPN |
Silan Microelectronics |
PNP SILICON TRANSISTOR |