SIHFZ48S - Vishay Siliconix

SIHFZ48S Power MOSFET

Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of a.

Features

• Advanced process technology
• Surface mount (IRFZ48S, SiHFZ48S)
• Low-profile through-hole (IRFZ48L, SiHFZ48L)
• 175 °C operating temperature Available
• Fast switching
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. G DS G D S G S N-Channel MOSFET DESCRIPTION .