Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of a.
• Advanced process technology
• Surface mount (IRFZ48S, SiHFZ48S)
• Low-profile through-hole (IRFZ48L, SiHFZ48L)
• 175 °C operating temperature
Available
• Fast switching
• Material categorization: for definitions of
compliance
please
see
www.vishay.com/doc?99912
Available
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
DS G
D S
G
S N-Channel MOSFET
DESCRIPTION
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIHFZ48 |
Vishay Siliconix |
Power MOSFET | |
2 | SIHFZ48 |
Vishay |
Power MOSFET | |
3 | SIHFZ48S |
Vishay Siliconix |
Power MOSFET | |
4 | SIHFZ40 |
Vishay |
Power MOSFET | |
5 | SIHFZ44 |
Vishay Siliconix |
Power MOSFET | |
6 | SIHFZ44L |
Vishay Siliconix |
Power MOSFET | |
7 | SiHFZ44S |
Vishay |
Power MOSFET | |
8 | SiHFZ46 |
Vishay |
Power MOSFET | |
9 | SiHFZ46-E3 |
Vishay |
Power MOSFET | |
10 | SIHFZ10 |
Vishay Siliconix |
Power MOSFET | |
11 | SIHFZ14 |
Vishay Siliconix |
Power MOSFET | |
12 | SiHFZ14L |
Vishay |
Power MOSFET |