Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for use in a wide variety of appl.
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRFZ14S, SiHFZ14S)
• Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)
• 175 °C Operating Temperature
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extermely efficient reliabel deviece for u.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIHFZ14 |
Vishay Siliconix |
Power MOSFET | |
2 | SiHFZ14S |
Vishay |
Power MOSFET | |
3 | SIHFZ10 |
Vishay Siliconix |
Power MOSFET | |
4 | SIHFZ20 |
Vishay |
Power MOSFET | |
5 | SiHFZ24 |
Vishay |
Power MOSFET | |
6 | SiHFZ24S |
Vishay |
Power MOSFET | |
7 | SIHFZ34 |
Vishay Siliconix |
Power MOSFET | |
8 | SIHFZ34L |
Vishay Siliconix |
Power MOSFET | |
9 | SIHFZ34S |
Vishay Siliconix |
Power MOSFET | |
10 | SIHFZ40 |
Vishay |
Power MOSFET | |
11 | SIHFZ44 |
Vishay Siliconix |
Power MOSFET | |
12 | SIHFZ44L |
Vishay Siliconix |
Power MOSFET |