SiC04A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery Mechanical Data Case: Molded plastic, TO-220AC Marking: 04A065T Benefits High Frequency Ope.
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-220AC
Marking: 04A065T
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
TO-220AC
Unit: inch(mm)
Maximum Ratings
PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
Continuous Forward Cur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIC04A065ND |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
2 | SIC04A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
3 | SIC04C60 |
CITC |
4A SiC Schottky Diode | |
4 | SIC02A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
5 | SIC02A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
6 | SIC02A120S |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
7 | SIC02C60 |
CITC |
2A SiC Schottky Diode | |
8 | SIC05120B |
MCC |
Schottky Barrier Rectifier | |
9 | SiC06A065ND |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
10 | SiC06A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
11 | SiC06A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
12 | SIC06C60 |
CITC |
6A SiC Schottky Diode |