The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capac.
ical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73149 S-52525Rev. B, 12-Dec-05 www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr SPICE Device Model Si5435BDC Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SI5435DC |
Vishay Siliconix |
P-Channel MOSFET | |
2 | Si5432DC |
Vishay |
N-Channel MOSFET | |
3 | SI5433DC |
Vishay Siliconix |
P-Channel MOSFET | |
4 | Si540 |
Silicon Labs |
Crystal Oscillator | |
5 | Si540 |
Skyworks |
Crystal Oscillator | |
6 | SI5401DC |
Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET | |
7 | SI5402BDC |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
8 | SI5402DC |
Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET | |
9 | Si5403DC |
Vishay |
P-Channel 30-V (D-S) MOSFET | |
10 | SI5404BDC |
Vishay Siliconix |
N-Channel 2.5-V (G-S) MOSFET | |
11 | SI5404DC |
Vishay Siliconix |
N-Channel MOSFET | |
12 | Si5406CDC |
Vishay |
N-Channel MOSFET |